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Advance Technical Data
HiPerFASTTM IGBT
C2-Class High Speed IGBTs
IXGH 60N60C2 IXGT 60N60C2
VCES IC25 VCE(sat) tfi typ
= 600 V = 75 A = 2.5 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600V TC = 25C
Maximum Ratings 600 600 20 30 75 60 300 ICM = 100 480 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W C C C C
TO-247 AD (IXGH)
C (TAB) G C E
TO-268 (IXGT)
G E
C (TAB)
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (TO-247)
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C TJ = 125C 2.1 1.8 2.5 V A mA nA V V
VGE(th) ICES IGES VCE(sat)
IC
= 250 A, VCE = VGE
VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 50 A, VGE = 15 V
(c) 2003 IXYS All rights reserved
DS99043A(09/03)
IXGH 60N60C2 IXGT 60N60C2
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 40 58 3900 VCE = 25 V, VGE = 0 V, f = 1 MHz 280 97 146 IC = 50 A, VGE = 15 V, VCE = 0.5 VCES 28 50 18 Inductive load, TJ = 25C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 25 95 35 0.48 18 Inductive load, TJ = 125C IC = 50 A, VGE = 15 V VCE = 400 V, RG = Roff = 2 25 0.45 130 80 1.2 150 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = 50 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns ns ns 0.8 mJ ns ns mJ ns ns mJ 0.26 K/W TO-268 Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
(TO-247)
0.25
K/W
Min. Recommended Footprint (Dimensions in inches and mm)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2 IXGT 60N60C2
Fig. 1. Output Characteristics @ 25 Deg. C
1 00 90 80 VG E = 15V 13V 11 V 9V 200 1 75 1 50
Fig. 2. Extended Output Characteristics @ 25 deg. C
VG E = 15V 13V 11 V
9V
I C - Amperes
I C - Amperes
70 60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5
7V
1 25 1 00 75 50
7V
5V
25 0
5V 1 1 .5 2 2.5 3 3.5 4 4.5
3
3.5
V CE - Volts
V CE - Volts
Fig. 3. Output Characteristics @ 125 Deg. C
1 00 90 80 70 VG E = 15V 13V 11 V 9V 1 .1 1 .2
Fig. 4. Temperature Dependence of V CE(sat)
VC E (sat) - Normalized
VG E = 15V 1 0.9 0.8 0.7
I C = 100A
I C - Amperes
7V
60 50 40 30 20 1 0 0 0.5 1 1 .5 2 2.5 3 3.5
I C = 50A
5V
I C = 25A 0.6 0.5 25 50 75 1 00 1 25 1 50
V CE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter voltage
5 4.5 4 T J = 25 C 200 1 75 1 50
Fig. 6. Input Admittance
VCE - Volts
3.5 3 2.5 2 1 .5 1 5 6 7 8 9 1 0 1 1 1 2 1 3 1 4 1 5
I C - Amperes
1 25 1 00 75 50 25 0 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 T J = 125 C 25 C -40 C
I C = 100A
50A 25A
V GE - Volts
(c) 2003 IXYS All rights reserved
V GE - Volts
IXGH 60N60C2 IXGT 60N60C2
Fig. 7. Transconductance
1 00 90 80 T J = -40 C 25 C 125 C
Fig. 8. Dependence of Eoff on RG
6 5 TJ = 125 C VGE = 15V VCE = 400V I C = 100A
E off - milliJoules
g f s - Siemens
70 60 50 40 30 20 1 0 0 0 25
4 I C = 75A 3 2 1 0 I C = 50A I C = 25A
50
75
1 00
1 25
1 50
1 75
200
2
4
6
8
1 0
1 2
1 4
1 6
I C - Amperes
R G - Ohms
Fig. 9. Dependence of Eoff on IC
5 R G = 2 Ohms R G = 10 Ohms - - - - 4 5
Fig. 10. Dependence of Eoff on Temperature
R G = 2 Ohms R G= 10 Ohms - - - - 4
I C = 100A
E off - MilliJoules
3
T J = 125 C
E off - milliJoules
VG E = 15V VC E = 400V
VG E = 15V VC E = 400V I C = 75A
3
2 T J = 25 C 1
2 I C = 50A 1 I C = 25A 25 50 75 1 00 1 25
0 20 30 40 50 60 70 80 90 1 00
0
I C - Amperes
TJ - Degrees Centigrade
Fig. 11. Gate Charge
1 5 VC E = 300V I C = 50A I G = 10mA 1 0000
Fig. 12. Capacitance
f = 1M Hz C ies 1 000 C oes 1 00 C res
1 2
VG E - Volts
9
6
3
0 0 20 40 60 80 1 00 1 20 1 40 1 60
Capacitance - pF
1 0 0 5 1 0 1 5 20 25 30 35 40
Q G - nanoCoulombs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
V CE - Volts
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXGH 60N60C2 IXGT 60N60C2
F ig . 13. M aximu m Tran sien t Th ermal R esistan ce
0 .3
0 .25
R (th) J C - (C/W)
0 .2
0 .15
0.1
0 .05 1 10 10 0 10 0 0
Puls e W idth - millis ec onds
(c) 2003 IXYS All rights reserved

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